Category: Technology Licenses
Created On: 2022-04-28
Record Count: 6
- Material Composite
- Electrical & Electronics
- Technical Know How
- Metals & Metal Products
IPSCIO Report Record List
Below you will find the records curated into this collection. This summary includes the complete licensed property description so that you can review and determine if this collection covers the topics, technology or transaction type that is relevant for your needs. The full report will include all relevant deal data such as the royalty base, agreement date, term description, royalty rates and other deal terms. For reference, here is a sample of a full IPSCIO curated royalty rate report: Sample Report
IPSCIO Record ID: 28084
Provisional Patent Application â€œMethod for Low Temperature Growth of Inorganic Materials from Solution using Growth and Re-Growthâ€.
IPSCIO Record ID: 89738
Licensed Claims shall mean any and all non-Equipment claims entitled to priority to U.S. Serial No. 09/227,679 and/or 60/070,991, including, without limitation, non-Equipment claims in U.S. Patent Nos. 6,749,687 and 7,105,055.
6,749,687 – In situ growth of oxide and silicon layers
7,105,055 – In situ growth of oxide and silicon layers
The lead technology, named Mears Silicon Technologyâ„¢, or MSTÂ®, is a thin film of reengineered silicon, typically 100 to 300 angstroms (or approximately 20 to 60 silicon atomic unit cells) thick. MSTÂ® can be applied as a transistor channel enhancement to CMOS-type transistors, the most widely used transistor type in the semiconductor industrry.
IPSCIO Record ID: 153750
Licensor Industrial Property Rights shall mean all Confidential Information and, whether or not the following constitute Confidential Information, all of Licensors patents, licenses, trademarks, trade names, inventions, inventors notes, copyrights, formulea know-how, trade secrets, drawings and designs relating to the Business represented by the Licensed Technology.
Licensed Technology shall mean all of Licensors proprietary technology relating to the Business which has been licensed to Licensee hereunder including, but not limited to, the Patents and the Marks.
The Marks means the trademark 'Licensor Materials' and all trade or service mark registrations (and any applications therefor) associated therewith.
Patents shall mean the following patents (i) U.S. Patent 4,535,029 dated 8/13/85, (ii) U.S. Patent 4,426,423 dated 11/17/84, (iii) U.S. Patent 4,358,506 dated 11/9/82, (iv) U.S. Patent 4,376,806 dated 3/15/83 and (v) U.S. Patent 4,396,677 dated 8/2/83.
4,535,029 – Method of catalyzing metal depositions on ceramic substrates
4,426,423 – Ceramic, cermet or metal composites
4,358,506 – Metal and carbon composites thereof
4,376,806 – Highly adhesive coatings for beryllia
4,396,677 – Metal, carbon, carbide and other composites thereof
The Intragene-TM- process is a proprietary methodology developed by metallurgists and materials scientists at the Company and has been granted six U.S. patents as well as national phase patents based on two European patent applications and three Japanese patents. The Intragene-TM- process facilitates the ability to metallize, solder or braze a wide range of engineering ceramics, graphite and refractory metals.
The materials division product line consists of Intragene-TM–based sputtering target assemblies and electromagnet systems. The sputtering target assemblies have been sold into the rigid disk market since 1986 and are considered one of the most reliable such assemblies in the market today. Sputtering target assemblies are sold to end-users as source materials for coating other materials via a vacuum-based process called sputtering. Sputtering is employed as the primary method for depositing thin film functional and protective layers on rigid magnetic media (hard disks), as well as in many semiconductor-manufacturing operations. Once a target is made, it must usually be incorporated into the sputtering apparatus by joining it to a backing plate to make sound electrical, thermal and mechanical contact. The bonding of a target to the backing plate, which is usually made of copper, forms what is known as the 'bonded target assembly.'
IPSCIO Record ID: 28059
IPSCIO Record ID: 332510
PUREVAP is a patent pending one-step proprietary process that is being developed by the Licensor that uses a plasma arc within a vacuum furnace to produce high purity metallurgical grade silicon and solar grade silicon from quartz. PUREVAP reduces the quartz with carbon using a plasma submerged arc. Under vacuum, and at very low operating pressure, the silicon is refined in a one-step process removing all impurities and transforming it to its purest form, resulting in a high purity silicon. The Licensor expects that the silicon grades produced by PUREVAP will, when commercialized, be used for different applications, including solar energy.
The PUREVAP Nano Silicon Reactor (NSiR) is designed to transform silicon into spherical silicon nanopowders and nanowires for use in lithium-ion batteries. The new proprietary process is designed to be highly scalable and will eventually allow the production of silicon nanopowders in large quantities at a competitive cost with other materials used in the lithium-ion space. The PUREVAP Nano Silicon Reactor can use different purities of silicon as feedstock.
A PUREVAP pilot system is capable of producing 200-metric tonnes per year of silicon metal directly from quartz.
Licensee is developing the PUREVAPTM QRR and the PUREVAPâ„¢ SiNR, two new innovative plasma-based processes which will permit the low-cost manufacturing of High Purity Silicon Metal, Spherical Nano-powders and Nanowires for Next-Generation Lithium-ion Batteries.
IPSCIO Record ID: 480
'Deposition Process Technology' means processes for depositing compositions of matter, including Deposition Precursor Technology, onto substrates using Deposition Plasma Jet Technology. Plasmas have been used extensively in a wide variety of industrial and high technology applications, from semiconductor fabrication to coatings of reflective films for window panels and compact disks.
Surface cleaning is a fundamental requirement for many industrial processes. It is also important for decontamination of objects. Traditionally, surface cleaning has been accomplished using solvent-based methods, technologies which have been available for more than 100 years. Increasing concerns about ground water and air pollution, greenhouse gases, and related health and safety issues have severely restricted the use of common volatile organic solvents, and even many of the recently-adapted, less hazardous chemical substitutes. Plasmas have been used extensively in a wide variety of industrial and high technology applications, from semiconductor fabrication to coatings of reflective films for window panels and compact disks. Plasmas ranging in pressure from high vacuum (<0.1 mTorr) to several Torr are most common, and have been used for film deposition, reactive ion etching, sputtering and other forms of surface modification. The primary advantage of plasma cleaning is that it is an 'all-dry' process, generates minimal effluent, does not require hazardous pressures, and is applicable to a wide variety of vacuum-compatible materials, including silicon, metals, glass, and ceramics.