Royalty Report: Semiconductors, Fabrication, Radiation – Collection: 203471


Curated Royalty Rate Report
Category: Technology Licenses, Created On: 2022-04-28, Record Count: 8


This collection of transactions and supporting information was developed using our AI algorithm to curate similar royalty reports into a cohesive collection to support your licensing, transfer pricing or other transaction scenarios where documented royalty rates and/or deal terms are important.
Category: Technology Licenses
Created On: 2022-04-28
Record Count: 8

Primary Industries

  • Semiconductors
  • Fabrication
  • Radiation
  • Security
  • Test/Monitoring
  • Material Composite
  • Technical Know How

IPSCIO Report Record List

Below you will find the records curated into this collection.  This summary includes the complete licensed property description so that you can review and determine if this collection covers the topics, technology or transaction type that is relevant for your needs.  The full report will include all relevant deal data such as the royalty base, agreement date, term description, royalty rates and other deal terms.  For reference, here is a sample of a full IPSCIO curated royalty rate report: Sample Report

IPSCIO Record ID: 203471

License Grant
Licensors hereby grant to Licensee, for the term of this Agreement, a worldwide and nonexclusive license under the method claims of the licensed patent to make, have made, use, lease, offer to sell, sell, distribute, import or otherwise dispose of licensed products and to use licensed equipment to manufacture licensed products.
License Property
Licensed patent shall mean (i) U.S. Patent No. 5,015,492 titled 'Method and Apparatus for Pulsed Energy Induced Vapor Deposition';

Licensed product shall mean a cryogenic receiver front-end device for wireless communications networks which contains a thin film radio frequency filter manufactured using high-temperature superconducting materials and either pulsed energy deposition or pulsed laser deposition. A list of the current Licensed products of Licensee, is set forth.   Additional Licensed products may be added to this list by Licensee upon written notice to Licensor.

Licensed equipment shall mean an apparatus performing pulsed energy deposition and/or pulsed laser deposition claimed in the Licensed patent.

Field of Use
This agreement pertains to the superconductor industry.

IPSCIO Record ID: 215209

License Grant
For the Exclusive license, Licensor grants an exclusive, nonsublicensable, perpetual license under its Proprietary Rights in the Licensor Technology, to use, make, have made, including by Defense Microelectronics Activity (DMEA), market and sell Licensed Products only to the Permitted Market.

For the non-exclusive license, Licensor grants a nonexclusive, nonsublicensable, perpetual license under its Proprietary Rights in Licensors Technology for magnetic quadrapole and magnetic sensing applications for underwater and underground object detection applications, including patent(s), to use, make, have made, market and sell Licensed Products only to the Permitted Market.

License Property
The Licensed products include the technology related to high temperature superconductive (HTS) electronics and cryoelectronics and associated packaging and cryogenics owned by Licensor.

The Permitted Market will mean the U.S. government or any state, local or foreign government or any agency, department, bureau or other subdivision or instrumentality thereof, except that the foreign market will be limited to military, intelligence and law enforcement entities.

Cryoelectronics or cryolectronics is the study of superconductivity under cryogenic conditions and its applications.

    Patent No.       Title                                             Rights of Others

            ———-       —–                                             —————-

            5,090,819    Superconducting Bolometer

            5,157,466    Grain Boundary Junctions in HTS Films

            5,207,884    Superconductor Deposition System

            5,219,826    Superconducting Junctions and Method of Making Same

            5,241,828    Cryogenic Thermoelectric Cooler

            5,280,013    Method of Preparing HTS Films on Opposite Sides of a Substrate

            5,449,659    Method of Bonding Multilayer Structures of Crystalline Materials                                
            5,130,294    High Temperature Superconductor – Calcium Titanate Sapphire Structures
            5,131,282    High Temperature Superconductor –  Strontium Titanate Sapphire Structures
            5,233,500    Package for Cascaded Microwave Devices
            5,651,016    Ultrahigh Speed Laser
            5,696,392    Improved Barrier Layers for Oxide Superconductor Devices and Circuits                  
            5,831,278    Three-Terminal Devices with Wide Josephson Junctions and asymmetric Control Lines

Field of Use
This agreement is for processes and apparatus relating to the cryoelectronics industry, limited to the military, intelligence and law enforcement entities.

IPSCIO Record ID: 286021

License Grant
University hereby grants to Licensee, subject to the terms herein recited, the exclusive, nontransferable (except as provided in Agreement herein) perpetual, royalty bearing, worldwide right and license under the Patent Rights with the right to grant sublicenses, to make, have made, use, sell and distribute (directly or indirectly through third parties) Licensed Products.
License Property
Patent Rights shall mean
(a)  U.S. Patent 4,710,030, Optical generator and detector of stress pulses.
(b)  U.S. Patent 5,706,094, Ultrafast optical technique for the characterization of altered materials
(c)  U.S. Patent 5,864,393, Optical method for the determination of stress in thin films.
(d)  U.S. Patent 5,748,317, Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector.
(e)  U.S. Patent 5,748,318, Optical stress generator and detector.
(f)  U. S. Patent 5,844,684, Optical method for determining the mechanical properties of a material.

Licensed Product shall not, however, include (i) replacement parts provided or sold to end-users after the initial system is delivered; (ii) all software provided after delivery which does not provide additional  functional capabilities which incorporates the claims of the Patent Rights; (iii) software upgrades or revisions which do not provide additional functional capabilities which incorporates the claims of the Patent Rights; (iv) service and maintenance of hardware and/or software and peripherals to the system.  For purposes of this Agreement, a product shall be deemed a Licensed Product if such product is covered, in whole or in part, by at least one Patent Right in one country, whether or not that product is made, used or sold within that country.  For example, an instrument system that incorporates one of the claims of U.S. Patent 4,710,030 would be a Licensed Product and would be subject to a royalty payment if sold in Japan, even though there is no issued patent in Japan.

Field of Use
This agreement pertains to the semiconductor industry relating to the measurement of the properties of thin films and surface characteristics; and semiconductor metrology automation platforms (FE-III, FE-IV) including, an automatic microscope, auto height, tilt optics platform, automated wafer handling robotics and control system with proprietary software, operation interface, pattern recognition system SECS-II/GEM system, data mapping system, data review system and recipe system, with attendant know-how, process technology and related software; and technology to industry of instruments for the measurement of surface characteristics.

Metal and Opaque Thin Film Measurement Solutions. Licensee's MetaPULSE family of metrology systems incorporates our proprietary technology for optical acoustic metrology, which allows customers to simultaneously measure the thickness and other properties of up to six metal or other opaque film layers in a non- contact manner on product wafers. By minimizing the need for test wafers, MetaPULSE enables Licensee's customers to achieve significant cost savings. Licensee believe that Licensee currently offer the only systems that can non-destructively measure up to six metal film layers with the degree of accuracy semiconductor device manufacturers demand. Licensee's MetaPULSE systems use ultra-fast lasers to generate sound waves that pass down through a stack of metal or opaque films such as copper and aluminum, sending back to the surface an echo which is detected and analyzed. These systems precisely measure the films with Angstrom accuracy and sub-Angstrom repeatability at high throughputs. This accuracy and repeatability is critical to semiconductor device manufacturers' ability to achieve higher manufacturing yields with the latest fabrication processes.

IPSCIO Record ID: 89738

License Grant
Licensor and their Netherlands Affiliate hereby grants to Licensee and its Affiliates for the Term a nonexclusive license, with the right to sublicense, under the Licensed Claims to develop, make, have made, use, sell, offer to sell, lease, and import Licensed Products in the Territory and to develop and perform Licensed Processes in the Territory. Nothing in this Agreement is intended to grant a license to anyone to make, use, sell, offer to sell, lease, or import Equipment that infringes any patent owned by Licensor.
License Property
Licensed Product shall mean products comprising Permitted Structures that absent the license granted hereunder, would infringe one or more Licensed Claims.

Licensed Claims shall mean any and all non-Equipment claims entitled to priority to U.S. Serial No. 09/227,679 and/or 60/070,991, including, without limitation, non-Equipment claims in U.S. Patent Nos. 6,749,687 and 7,105,055.

6,749,687 –  In situ growth of oxide and silicon layers
7,105,055 – In situ growth of oxide and silicon layers

The lead technology, named Mears Silicon Technology™, or MST®, is a thin film of reengineered silicon, typically 100 to 300 angstroms (or approximately 20 to 60 silicon atomic unit cells) thick. MST® can be applied as a transistor channel enhancement to CMOS-type transistors, the most widely used transistor type in the semiconductor industrry.

Field of Use
This agreement pertains to the semiconductor industry.

IPSCIO Record ID: 480

License Grant
The Licensor  hereby grants a sole and exclusive, worldwide, royalty-bearing right and license under the Licensed Patent Applications and the Licensed Patents to make, have made, use, sell, offer for sale, lease and otherwise dispose of Licensed Products in the Licensed Territory in the Licensed Field of Use.  Licensee accepts the terms and conditions required for sublicensees as outlined in the UC License.
License Property
Licensed Product, singular or plural, shall mean any Atmospheric Pressure Plasma Jet Technology wherein the manufacture, use, offer for sale, sale or importation of Atmospheric Pressure Plasma Jet Technology by Licensee would, but for the rights and license granted herein, constitute an infringement of a valid and enforceable claim of a subsisting Licensed Patent and shall not include Licensee's standard power delivery equipment (i.e., stand alone Licensee's power supplies and match networks) but includes power generation and delivery equipment which is designed specifically as an integral and indivisible part of the Atmospheric Pressure Plasma Jet Technology.

'Deposition Process Technology' means processes for depositing compositions of matter, including Deposition Precursor Technology, onto substrates using Deposition Plasma Jet Technology.  Plasmas have been used extensively in a wide variety of industrial and high technology applications, from semiconductor fabrication to coatings of reflective films for window panels and compact disks.

Surface cleaning is a fundamental requirement for many industrial processes. It is also important for decontamination of objects. Traditionally, surface cleaning has been accomplished using solvent-based methods, technologies which have been available for more than 100 years. Increasing concerns about ground water and air pollution, greenhouse gases, and related health and safety issues have severely restricted the use of common volatile organic solvents, and even many of the recently-adapted, less hazardous chemical substitutes.  Plasmas have been used extensively in a wide variety of industrial and high technology applications, from semiconductor fabrication to coatings of reflective films for window panels and compact disks. Plasmas ranging in pressure from high vacuum (<0.1 mTorr) to several Torr are most common, and have been used for film deposition, reactive ion etching, sputtering and other forms of surface modification. The primary advantage of plasma cleaning is that it is an 'all-dry' process, generates minimal effluent, does not require hazardous pressures, and is applicable to a wide variety of vacuum-compatible materials, including silicon, metals, glass, and ceramics.

Field of Use
'Licensed Field of Use shall mean all fields in which Licensee can demonstrate that it is one of the top three leading vendors in market share in each of such fields, as demonstrated by dollar volume of sales in the preceding year, including but not limited to Semiconductor Processing, Data Storage (including but not limited to magnetic and optical), Flat Panel and Electronic Displays, and Architectural Glass, and in any other field mutually agreed upon.

IPSCIO Record ID: 26122

License Grant
The Licensor is the assignee of two United States patents U.S. Patent No. 6,740,224 for an invention entitled Method of Manufacturing Carbon Nanotubes which issued on May 25, 2004; and U.S. Patent No. 7,008,605 for an invention entitled Method of Manufacturing High Quality Carbon Nanotubes which issued on March 7, 2006 and, effective April 27, 2007 the Licensor hereby grants to Licensee a terminable, royalty-bearing, nonexclusive License to practice, i.e., to make, have made, use, offer to sell, sell, transfer, or dispose of, the Licensed Invention as limited to the Licensed Area for a term that is equal to the unexpired term of the last patent to be in effect.
License Property
A non-catalytic process for the production of carbon nanotubes includes supplying an electric current to a carbon anode and a carbon cathode which have been securely positioned in the open atmosphere with a gap between them. The electric current creates an electric arc between the carbon anode and the carbon cathode, which causes carbon to be vaporized from the carbon anode and a carbonaceous residue to be deposited on the carbon cathode. Inert gas is pumped into the gap to flush out oxygen, thereby preventing interference with the vaporization of carbon from the anode and preventing oxidation of the carbonaceous residue being deposited on the cathode. The anode and cathode are cooled while electric current is being supplied thereto. When the supply of electric current is terminated, the carbonaceous residue is removed from the cathode and is purified to yield carbon nanotubes.
Field of Use
The right granted apply to the field of manufacturing carbon nanotubes.

IPSCIO Record ID: 28421

License Grant
Japanese Parent hereby grants to Licensee a non-exclusive and non-transferable license under Parent Licensed Patents to make, have made, use, sell, offer to sell, lease, import or otherwise dispose of Licensed Products other than Manufacturing Apparatuses anywhere in the world.  

Licensed Product means any of the items described in the following clauses (a) through (d) and/or parts thereof (a) Semiconductive Material;(b) Auxiliary Part; (c) Semiconductor Product; or (d) Manufacturing Apparatus.

Semiconductor Product means (a) a Semiconductive Element; or (b) a Semiconductive Element and one or more films of conductive, semiconductive or insulating materials formed on a surface or surfaces of such Semiconductive Element, said film or films comprising one or more conductors, active or passive electrical circuit elements or any combination thereof.

IPSCIO Record ID: 328

License Grant
Japanese Licensor hereby grants to Licensee the exclusive License under the Patents, Technical Information and Intellectual Property Rights to manufacture, use, offer for sale, sell, import and/or lease the Products in the territory; provided, however, Licensee agrees not to manufacture any of the three Products listed in this Agreement at any time on or prior to June 30, 2006; provided further, however, that Licensee may start on the effective date to manufacture, use, offer for sale, sell, import and/or lease in the territory all subsystems related to any Products, including, but not limited to, the Nison Vesper submodule. For the avoidance of doubt, Licensor acknowledges and agrees that the License granted to Licensee under this Agreement includes the right of the Licensee to subLicense to any purchaser of the Products the right to use (but not manufacture) the Patents, Technical Information and Intellectual Property Rights.
License Property
Licensor was incorporated to, among other things, manufacture and distribute certain products and systems of Licensee in Japan in accordance with a Shareholders Agreement dated June 5, 1991.  This license is a result of Licensor buying a portion of the business of a semiconductor manufacturing equipment business and licensing back rights to Licensee.

The parties agree that the definition of Products includes subsystems related to the products (e.g. the Nison Vesper submodule) only to the extent such subsystems are incorporated in Products sold by Licensee to end-users of the Products and not to original equipment manufacturers.  Three products are covered by this agreement Spin Processor CENOTE, a single wafer wet station; Best, a wafer backside3 etcher, and Wet Station, an immersion process system.




Method of recirculation of high temperature etching solution


Cleaning/ rinsing vessel for semiconductor wafer


Method for refinig etchant


Single wafer spin etching method


Etching method with hot phosphoric acid


Composition measuring method for buffered hydrofluoric acid for semiconductor wafer etching


Regeneration treatment apparatus for etchant and etching apparatus using the same


Cleaning apparatus


Filter device with bellows damper and chemical–circulation treatment device for semiconductor wafer using the same


Semiconductor wafer cleaning system


Method of etching semiconductor wafer


Device and method for etching semiconductor wafer


Scrub cleaning device


Cleaning Equipment of wafer


Equipment and method for processing solution for semiconductor wafer


Wafer–cleaning device


The apparatus and the method of etching wafer


The apparatus of reclaiming etching liquid and method and apparatus of etching


The method of controlling the boiling chemical


The apparatus and the method of floating wafer chuck


The apparatus of wafer treatment and shaft


Etching method and equipment


Processing method and processing device before wafer inspection


Processing method and processing device before wafer inspection


Method for recirculating high–temperature etching soluthin


Method for purification of etching solution



Class of

Designated goods

The apparatus of filtering recirculation etching liquid and other chemical machines and instruments

Automatic fluid– composition control machines and instruments

The apparatus of wafer etching, chemical machines and instruments

4 Stelna
The machines of chemical reaction and machines of separation, the chemical reclaiming etching apparatus, and other chemical machine and instruments.

Remark An application shall designate one or more items of goods on which the trademark is to be used, in one class of the classification of goods, prescribed by Cabinet Order.

Product Name


Spin Processor CENOTE
Single Wafer Wet Station


                Wafer Backside Etcher

Wet Station

Immersion Process System

Field of Use
Products means any and all products, systems and subsystems now or hereafter produced by or under control of Licensee based upon the Technical Information given under this Agreement which are in the field of surface conditioning, cleaning, etch and stripping technology such as the Technical Information used in the products to this Agreement and any products, systems and subsystems to be used in the Field which will be developed, designed or invented, or otherwise acquired by Licensor in the future during the term of this Agreement.
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